Advances in the semiconductor industry continue to be desired to address demand for semiconductor devices capable of high performance and low power consumption in a wide variety of applications. In one or more applications, enhanced high-voltage semiconductor devices such as, enhanced Schottky diodes, p-i-n diodes, insulated-gate bipolar transistors (IGBT), bipolar junction transistors (BJTs), etc., may be desired for, for instance, high-speed power switching applications.
This technology relates to adaptive optical devices, and particularly to liquid lenses. Such optical devices avoid the increased weight and fabrication complexity associated with moving solid lenses. This technology utilizes a lens magnification control for adjusting magnification of the liquid lens by increasing a volume of protruding liquid residing in a chamber.
This technology relates to visually-guided multiprobe microassembly for assembling micro-electromechanical (MEMS) devices from multiple parts that are assembled rather than using bulk-processes to produce devices monolithically. Current production technologies primarily use a single wafer that is process chemically to produce finished devices. While this is useful for many devices, it results in mechanical regions that exist primarily in the plane and do not have fully spatial mechanisms without significant depth of stacked parts.
This technology relates to detecting radiation by directing an optical beam into a volume of gas, ionizing a portion of the volume of gas with the optical beam to produce a plasma, and then detecting an acoustic signal produced from an interaction of a radiation wave with the plasma. This technology relates to the phenomenon of enhanced acoustic emission from laser-induced plasma under the influence of a single-cycle terahertz pulse. Aspects of this technology bridge the unintentional gap between THz photonics and photo-acoustics.
This technology relates to liquid lenses, which are adaptive optical elements that avoid some of the drawbacks of mechanical optical elements, such as delayed movements and excess weight. This technology provides an oscillating liquid lens that includes a liquid drop with first and second droplet portions, a second liquid, and a drive that oscillates the liquid drop within a channel of a substrate.
This technology relates to a plasma diagnostic method by directing THz radiation into plasma and detecting an emission due to the interaction of the THz radiation with the plasma to characterize the plasma. Terahertz (THz) waves occupy a segment of the electromagnetic spectrum between the infrared and microwave bands. As such, they can be used for imaging and sensing in ways not possible with conventional technologies such as X-ray and microwave.
This technology relates to detecting terahertz radiation using an optical beam in a volume of gas. Ionizing a portion of the volume of gas with the optical beam produces a plasma and fluorescence is produced from an interaction of a radiation wave with the plasma. Information contained in the characteristics of the detected fluorescence can be used to characterize the radiation wave. Terahertz (THz) waves occupy a segment of the electromagnetic spectrum between the infrared and microwave bands.
This technology relates to high electron mobility transistors (HEMT). In conventional off-type HEMTs, a large amount of gate threshold voltage variation is often found. Transistors according to this technology include a p-type region, a barrier region, an insulation film, a gate electrode, and a channel region. The channel region is connected to an upper surface of the p-type region. The channel region is n-type or i-type and provided with a first channel region and a second channel region. The barrier region is forming a hetero-junction with an upper surface of the first channel region.
This technology provides an improved MOSFET structure for power switching applications. An n- GaN reduced surface field (RESURF) region is created using epitaxial growth and selective etching of an n- drift layer. This is followed by ion implantation to achieve n GaN contact regions for the source and drain. This avoids the difficulties in controlling doping levels, leakage current, and electron mobility when using ion implantation alone to achieve the two different doping zones.
This technology couples the physical layer characteristics of wireless networks with key generation algorithms. It is based on the wireless communication phenomenon known as the principle of reciprocity which states that in the absence of interference both transmitter and receiver experience the same signal envelope. Signal envelope information can provide to the two transceivers two correlated random sources that provide sufficient amounts of entropy which can be used to extract a cryptographic key.