Currently, the most common semiconductor dielectric is silicon dioxide (SiO2), which has a dielectric constant of about 4.0. There is a substantial interest in materials with low dielectric constants that can replace SiO2-based insulators as inter layer dielectrics (ILD). This invention is directed to a new process for the preparation of low dielectric constant films. The sol-gel process employs a hyperbranched polycarbosilane precursor that is applied to a substrate by spin coating.

There is an increasing interest in using nanoparticles as building blocks for well-defined structures that have practical applications owing to the various novel properties of nanoparticles. However, their assembly is a challenging task. Methods based on surface functionalization, andor template patterning have been used for this purpose, but both of these processes can be rather complicated. Thus, there is a continuing need for a simple method for synthesizing high aspect ratio microstructures constituted of nanoparticle building blocks.

For most types of gelatin-based imaging elements, surface abrasion and scratching results in reduction of image quality. Thus, processing the image and, later, casual handling of the image can easily mark or disfigure the image. There is, therefore, a need for an imaging element having improved scratch resistance over materials currently used.

Several methods for the preparation of polymeric microbeads for chromatographic separations in the pharmaceutical industry have been developed over the past several decades. However, those methods often result in microbeads with a wide distribution of sizes. This invention results in more uniform particle size but also microbeads that are derived from multifunctional epoxy monomers and that have residual epoxy functionality on their surfaces.

Atomic layer deposition (ALD) is an ideal technique for fabricating thin layers requiring precision-controlled nanoscale film thickness. It is a type of chemical vapor deposition (CVD), wherein a film is built up through deposition of multiple ultra thin layers of atomic level controllability, with the thickness of the ultimate film being determined by the number of layers deposited.

Subjecting single-walled carbon nanotubes to a flash of light causes the material to ignite, producing a photo-acoustic effect. A simple camera flash demonstrates how heat confinement in nanostructures can lead to drastic structural effects and induce ignition under exposure to conditions where no reaction would be expected for macro scale materials. This technology could have multiple applications such as optoelectronic sensors and light triggered remote detonators.

Ceramics are used in applications requiring strength, hardness, light weight, and resistance to abrasion, erosion, and corrosion, at both ambient and elevated temperatures. However, traditional ceramic materials are characteristically brittle, and this brittleness limits their use. While reduction of brittleness has been obtained with fiber-reinforced ceramic matrix composites, there continues to be a need for materials that combine the desirable properties of ceramics with improved fracture toughness.

Living polymerization is a method by which polymers having a narrow molecular weight distribution may be obtained. Block copolymers may also be synthesized using the method. Block copolymers may display improved mechanical andor chemical properties over corresponding random copolymers. One promising method for free radical polymerization with living characteristics is reversible addition-fragmentation chain transfer (RAFT) polymerization.

Conventional methods for fabricating silicon carbide thyristors and gate turn-off thyristors include utilizing an all-epitaxial growth technique to fabricate each layer of the device. This epitaxial growth involves doping the crystal during crystal growth. This method has been the only method used for silicon carbide (SiC) thyristor fabrication. This invention is a new method for forming one or more doped layers using ion-implantation in the fabrication of thyristors after the crystal structure has been formed.