Atomic layer deposition (ALD) is an ideal technique for fabricating thin layers requiring precision-controlled nanoscale film thickness. It is a type of chemical vapor deposition (CVD), wherein a film is built up through deposition of multiple ultra thin layers of atomic level controllability, with the thickness of the ultimate film being determined by the number of layers deposited. This technology is based on the unexpected discovery that a metallic layer may be deposited by an ALD process from a metallorganic precursor on a noble or semi-noble metal substrate, using hydrogen as a reducing agent. The metal of the deposited layer may be Fe, Ru, Co, Rh, Ir, Ni, Pd, Pt, Ag, or Au.