Solid state radiation detectors, such as neutron detectors and gamma ray detectors, have been proposed as alternatives to gas-tube based detectors. Radiation-detecting hetero-structures may be formed by using physical etching processes, such as reactive ion etching (RIE) to form trenches in a semiconductor substrate, followed by using chemical vapor deposition (CVD) to deposit radiation-detecting material within the formed trenches.
Rensselaer researchers have developed programmable directed mesoscopic self-assembly and energy-assisted placement processes suitable for high speed, high accuracy, and low-defect rate LED system packaging operations. Current LED packaging technology is handled one semiconductor device element at a time, and is limited to a speed of about 10K units per hour. New technology is needed to package these devices, as well as associated control devices, into integrated lighting systems at much higher speeds, up to 10K units per minute.