To implement hybrid nanodevices consisting of nanowire crossbars on top of a CMOS backplane, the challenge is to interface between the relatively coarse features of the CMOS domain and the dense nanowires above. Such an interface can be realised through a microwire to nanowire demultiplexer. This technology provides a hybrid demultiplexer architecture that combines both resistor and field effect transistor (FET) devices.