GROWTH OF CUBIC CRYSTALLINE PHASE STRUCURE ON SILICON SUBSTRATES AND DEVICES COMPRISING THE CUBIC CRYSTALLINE PHASE STRUCTURE
This technology relates to semiconductor devices and growth techniques in the field of III-N semiconductors. For example, the technology provides a semiconductor device with a substrate comprising a groove. A buffer layer is formed on a surface of the groove. The buffer layer has at least one material chosen from AIN, GaN or AlxGa1-xN, where x is between zero and one. An epitaxially grown semiconductor material is disposed over the buffer layer, and at least a portion of the epitaxially grown semiconductor material having a cubic crystalline phase structure.