technologies available for licensing

Rensselaer Polytechnic Institute has a variety of technologies ranging from chemicals to lighting systems to algorithms and everything in-between. Rensselaer’s technologies can help you start a company or be a great addition to your current technology portfolio. To see what technologies are currently available for licensing at Rensselaer, please use the search below. If you have a technology need that Rensselaer’s technologies don’t currently solve, please reach out to IPO to discuss more your needs.

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This technology relates to the decorrelation of audio signals for use in surround sound techniques. Decorrelation improves listener envelopment and spatial immersion, but prior techniques suffer from unwanted timbre coloration and are computationally expensive. The present technology improves decorrelation by utilizing a pseudorandom sequence and a reciprocal of the…
This technology relates to nanofilled polymeric materials with a tunable refractive index without increased scattering or loss. The tunability allows the creation of hybrid nanocomposites that combine the advantages of organic polymers (low weight, flexibility, good impact resistance, and excellent processability) and inorganic materials (high refractive index, good chemical…
This technology relates to a process for creating electrodes in which high-surface area nanostructures are fabricated in situ by electrochemically etching a sacrificial scaffold material. Removing a material after it has been built into the cell opens up pores within the electrode whose size and density can be controlled, resulting in higher efficiency and Pt utilization.…
This technology relates to high electron mobility transistors (HEMT). In conventional off-type HEMTs, a large amount of gate threshold voltage variation is often found. Transistors according to this technology include a p-type region, a barrier region, an insulation film, a gate electrode, and a channel region. The channel region is connected to an upper surface of the p-…
This technology provides an improved MOSFET structure for power switching applications. An n- GaN reduced surface field (RESURF) region is created using epitaxial growth and selective etching of an n- drift layer. This is followed by ion implantation to achieve n GaN contact regions for the source and drain. This avoids the difficulties in controlling doping levels, leakage…
This technology couples the physical layer characteristics of wireless networks with key generation algorithms. It is based on the wireless communication phenomenon known as the principle of reciprocity which states that in the absence of interference both transmitter and receiver experience the same signal envelope. Signal envelope information can provide to the two…
Optical concentrators are used to focus sunlight onto a smaller area where a photovoltaic cell is located in order to reduce the total area (and cost) of PV cells. Concentrators often have problems assocated with higher temperatures and the need to be moved to track the movement of the sun. This technology utilizes double sided PVs and multiple optical elements as a…
To implement hybrid nanodevices consisting of nanowire crossbars on top of a CMOS backplane, the challenge is to interface between the relatively coarse features of the CMOS domain and the dense nanowires above. Such an interface can be realised through a microwire to nanowire demultiplexer. This technology provides a hybrid demultiplexer architecture that combines both…
Coating particulate material can often enhance the physical and chemical properties of the material including improved insulation properties, improved abrasion resistance, and improved strength. However, coated particulate materials are often porous and tend to absorb gases and liquids, which destroy the material, or at the very least, interfere with its insulating properties…
Many envisioned carbon nanotube (CNT) applications, such as device interconnections in integrated circuits, require directed growth of aligned CNTs, and low-resistance high-strength CNT junctions with tunable chemistry, stability, and electronic properties. However, forming CNT-CNT junctions on the substrate plane in a scalabe fashion, to enable in-plane device circuitry and…