technologies available for licensing

Rensselaer Polytechnic Institute has a variety of technologies ranging from chemicals to lighting systems to algorithms and everything in-between. Rensselaer’s technologies can help you start a company or be a great addition to your current technology portfolio. To see what technologies are currently available for licensing at Rensselaer, please use the search below. If you have a technology need that Rensselaer’s technologies don’t currently solve, please reach out to IPO to discuss more your needs.

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Displaying 41 - 50 of 91
This technology relates to a high thermal conductivity thermal interface material that allows for the formation of an interconnected, spanning, high thermal conductivity network within the matrix of a polymeric material using nano particles. This material can yield two orders of magnitude higher thermal conductivities than the non-network counterpart, as well as factorial…
This technology relates to a full spectrum broad wavelength emission white light source fabricated using a graded composition optically clear substrate that enables high efficiency, high flux, narrow or wide spectral width, large area, low cost LEDs with peak emission wavelength in the range of visible wavelength range from 400-750 nm. The technology also provides a platform…
This technology relates to a wireless radio communications scheme that minimizes interferences between different channels and increases high bandwidth data communication. Furthermore, this modulation scheme is easy to implement with simple low cost electronic systems. Possible applications for this technology include: optical communication, energy efficient illumination,…
This technology relates to liquid lenses, which are adaptive optical elements that avoid some of the drawbacks of mechanical optical elements, such as delayed movements and excess weight. This technology provides an oscillating liquid lens that includes a liquid drop with first and second droplet portions, a second liquid, and a drive that oscillates the liquid drop within a…
This technology relates to the decorrelation of audio signals for use in surround sound techniques. Decorrelation improves listener envelopment and spatial immersion, but prior techniques suffer from unwanted timbre coloration and are computationally expensive. The present technology improves decorrelation by utilizing a pseudorandom sequence and a reciprocal of the…
This technology relates to nanofilled polymeric materials with a tunable refractive index without increased scattering or loss. The tunability allows the creation of hybrid nanocomposites that combine the advantages of organic polymers (low weight, flexibility, good impact resistance, and excellent processability) and inorganic materials (high refractive index, good chemical…
This technology relates to a process for creating electrodes in which high-surface area nanostructures are fabricated in situ by electrochemically etching a sacrificial scaffold material. Removing a material after it has been built into the cell opens up pores within the electrode whose size and density can be controlled, resulting in higher efficiency and Pt utilization.…
This technology relates to high electron mobility transistors (HEMT). In conventional off-type HEMTs, a large amount of gate threshold voltage variation is often found. Transistors according to this technology include a p-type region, a barrier region, an insulation film, a gate electrode, and a channel region. The channel region is connected to an upper surface of the p-…
This technology relates to solid-state devices as replacements for incandescent light bulbs. The LED based bulb uses the normal Edison socket, but the LED and heat sink are placed on the far end of the bulb. The heat sink attaches to the bottom and outside of the bulb providing a structural base for the LED. Several alternative shapes for the light guide are provided to…
This technology provides an improved MOSFET structure for power switching applications. An n- GaN reduced surface field (RESURF) region is created using epitaxial growth and selective etching of an n- drift layer. This is followed by ion implantation to achieve n GaN contact regions for the source and drain. This avoids the difficulties in controlling doping levels, leakage…