technologies available for licensing

Rensselaer Polytechnic Institute has a variety of technologies ranging from chemicals to lighting systems to algorithms and everything in-between. Rensselaer’s technologies can help you start a company or be a great addition to your current technology portfolio. To see what technologies are currently available for licensing at Rensselaer, please use the search below. If you have a technology need that Rensselaer’s technologies don’t currently solve, please reach out to IPO to discuss more your needs.

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Displaying 41 - 50 of 73
This technology relates to ultrasonic transducer arrangement for transmitting and receiving ultrasonic data and power to and from a barrier. Many transducer designs suffer from uneven pressure between critical surfaces, which results in warped components and degraded performance. This technology provides a transducer design that avoids these issues and provides improved…
This technology relates to a full spectrum broad wavelength emission white light source fabricated using a graded composition optically clear substrate that enables high efficiency, high flux, narrow or wide spectral width, large area, low cost LEDs with
This technology relates to a full spectrum broad wavelength emission white light source fabricated using a graded composition optically clear substrate that enables high efficiency, high flux, narrow or wide spectral width, large area, low cost LEDs with peak emission wavelength in the range of visible wavelength range from 400-750 nm. The technology also provides a platform…
This technology relates to a wireless radio communications scheme that minimizes interferences between different channels and increases high bandwidth data communication. Furthermore, this modulation scheme is easy to implement with simple low cost electronic systems. Possible applications for this technology include: optical communication, energy efficient illumination,…
This technology relates to high electron mobility transistors (HEMT). In conventional off-type HEMTs, a large amount of gate threshold voltage variation is often found. Transistors according to this technology include a p-type region, a barrier region, an insulation film, a gate electrode, and a channel region. The channel region is connected to an upper surface of the p-…
This technology provides an improved MOSFET structure for power switching applications. An n- GaN reduced surface field (RESURF) region is created using epitaxial growth and selective etching of an n- drift layer. This is followed by ion implantation to achieve n GaN contact regions for the source and drain. This avoids the difficulties in controlling doping levels, leakage…
Optical concentrators are used to focus sunlight onto a smaller area where a photovoltaic cell is located in order to reduce the total area (and cost) of PV cells. Concentrators often have problems assocated with higher temperatures and the need to be moved to track the movement of the sun. This technology utilizes double sided PVs and multiple optical elements as a…
To implement hybrid nanodevices consisting of nanowire crossbars on top of a CMOS backplane, the challenge is to interface between the relatively coarse features of the CMOS domain and the dense nanowires above. Such an interface can be realised through a microwire to nanowire demultiplexer. This technology provides a hybrid demultiplexer architecture that combines both…
Coating particulate material can often enhance the physical and chemical properties of the material including improved insulation properties, improved abrasion resistance, and improved strength. However, coated particulate materials are often porous and tend to absorb gases and liquids, which destroy the material, or at the very least, interfere with its insulating properties…
Conventional laterla trench-based components, such as trench lateral transistors, typically have a substantial undesirable capacitance related to the overlap of gate and drain electrodes in the same trench. Particularly, many trench-type lateral transistors are fabricated with the gate and the drain formed in the same trench, typically separated by an oxide layer. The overlap…