technologies available for licensing

Rensselaer Polytechnic Institute has a variety of technologies ranging from chemicals to lighting systems to algorithms and everything in-between. Rensselaer’s technologies can help you start a company or be a great addition to your current technology portfolio. To see what technologies are currently available for licensing at Rensselaer, please use the search below. If you have a technology need that Rensselaer’s technologies don’t currently solve, please reach out to IPO to discuss more your needs.

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Using air as an emitting medium to generate terahertz wave has attracted attention because of its potential applications for remote distance THz wave sensing and imaging. Yet, the cutting edge energy conversion efficiency of THz wave generation with optical method is extremely low. Researchers at Rensselaer have developed a method for generating amplified terahertz radiation…
This technology is directed to nanostructures in general and to metal nanoblades in particular. Oblique angle deposition has been demonstrated as an effective technique to produce three-dimensional nanostructures, such as nanosprings and nanorods. Because of the physical shadowing effect, the oblique incident vapor is preferentially deposited onto the highest surface features…
Since terahertz (THz) wave spectroscopy has been utilized to detect a number of chemical and explosive materials and related compounds by providing their spectral signatures in the THz frequency range, there is an interest in THz wve spectroscopy as a technique to sense improvised explosive devices. However, due to the severe water vapor attenuation of THz waves in the…
Conventional laterla trench-based components, such as trench lateral transistors, typically have a substantial undesirable capacitance related to the overlap of gate and drain electrodes in the same trench. Particularly, many trench-type lateral transistors are fabricated with the gate and the drain formed in the same trench, typically separated by an oxide layer. The overlap…
An edge illuminated photovoltaic device is a photovoltaic device in which light illuminates a p-n junction through the edge of the device (i.e. in the direction substantially non-parallel) to the direction defined by the devices electrical contacts to the outer surface. While these devices are advantageous, they are yet to achieve the high efficiency and low cost required for…
The use of fillers in both thermoplastic and thermoset polymers has been common. The practice of filling polymers is motivated both by cost reduction and by the need to obtain altered or enhanced properties. Nanostructured dielectric materials have demonstrated advantages over micro-filled polymer dielectrics. However, this is a need to improve these nanocomposites such that…
Data communication over wireless channels has become increasingly common, but wireless channels may be lossy such that data is often lost during transmission. This invention is directed to devices and methods for transmitting or receiving data packets in a data block in a communication network with a transport protocol. A loss toleranct TCP protocol is used in which a maximum…
Electrical impedance tomography (EIT) utilizes electrodes placed on the surface of a body to determine the complex conductivity distribution within the body. When using a voltage source in EIT, it is necessary to know both the applied voltage and the resulting current with high precision, which cannot be achieved with current systems. This invention is directed to a voltage…
For many decades, dry processing techniques, such as physical vapor deposition (PVD), have played a dominant role in integrated circuit metallization processes. During microelectronic device fabrication, films are often deposited on non-planar surfaces. The surface topography that wafers exhibit at various steps in the fabrication process arise from patterned features related…
Silicon Carbide (SiC) has long been recognized as the choice for high voltage, high temperature, and high power applications. To achieve optimum design in SiC power devices, a varying charge in the lateral direction should be introduced. To f orm a junction termination extension (JTE) in SiC, different implant doses into multiple spaced zones can be used to create a non-…