APPARATUS FOR GROWTH OF SINGLE CRYSTALS INCLUDING A SOLUTE FEEDER

This invention is directed to a method and apparatus for growing a multi-component single crystal boules that provides high quality and growth rate by growing the crystal from a multi-component melt, such as a ternary, quaternary or higher order melt. In the past, only binary compounds such as GaAs) could be commercially produced by directional solidification from melts, while compounds with more than two components resulted in a high density of defects.

ATOMIC LAYER DEPOSITION OF COBALT FROM COBALT METALLORGANIC COMPOUNDS

Atomic layer deposition (ALD) is an ideal technique for fabricating thin layers requiring precision-controlled nanoscale film thickness. It is a type of chemical vapor deposition (CVD), wherein a film is built up through deposition of multiple ultra thin layers of atomic level controllability, with the thickness of the ultimate film being determined by the number of layers deposited.