Silicon Carbide (SiC) has long been recognized as the choice for high voltage, high temperature, and high power applications. To achieve optimum design in SiC power devices, a varying charge in the lateral direction should be introduced. To f orm a junction termination extension (JTE) in SiC, different implant doses into multiple spaced zones can be used to create a non-uniform implant profile extending away from a junction termination. However, multiple implantation steps increase process cycle time, complexity, and fabrication cost.