DIFFERENTIAL TIME DOMAIN SPECTROSCOPY METHOD FOR MEASURING THIN FILM DIELECTRIC PROPERTIES

In modern microcircuits, the high-frequency capacitance of interlevel dielectrics is a critical parameter that must be understood for realization of high-speed (clock speed1 GHz) electronic devices. The characterization of the high-frequency dielectric properties of interlevel dielectrics is thereby crucial. For free-space dielectric constant measurement of the film on a substrate, where the thickness of the film is much thinner than the wavelength of the applied electromagnetic (EM) waves, the free-space time-domain technique can be problematic.