ELECTROCHEMICAL PLANARIZATION OF METAL FEATURE SURFACES

This invention is directed to a novel non-destructive method to remove excess layers of copper from microchip interconnect-metallization processing, allowing copper to be used in place of aluminum. The new method, an Electro-Chemical Planarization process, is a means of removing the copper in an electrolysis-designed solution bath without damaging the thin-film and interconnect surfaces. The process addresses the damages incurred by conventional CMP allowing for electron-migration into the insulative film layers leading to the eventual short-circuiting within the microchip devices.