The subject invention relates to a method for making ternary and quaternary semiconductor materials. These materials are currently produced in the form of thin layers by non-equilibrium growth techniques (from diluted solutions and vapor phase) on binary substrates using buffer layers to relieve misfit related stresses at the epilayer-substrate interface. One disadvantage of epitaxial technology is its high cost. In addition, the buffer layer technology is not optimized for all systems, and often devices exhibit large leakage currents due to poor interfacial regions. The present invention provides an improved method for making for high quality substrates that simplifies the manufacturing cycle and significantly reduces the cost of manufacture.

Submission Date
Reference Number
R00-002
Contact
Natasha Sanford