This technology relates to a process for creating electrodes in which high-surface area nanostructures are fabricated in situ by electrochemically etching a sacrificial scaffold material. Removing a material after it has been built into the cell opens up pores within the electrode whose size and density can be controlled, resulting in higher efficiency and Pt utilization.

To implement hybrid nanodevices consisting of nanowire crossbars on top of a CMOS backplane, the challenge is to interface between the relatively coarse features of the CMOS domain and the dense nanowires above. Such an interface can be realised through a microwire to nanowire demultiplexer. This technology provides a hybrid demultiplexer architecture that combines both resistor and field effect transistor (FET) devices.

An edge illuminated photovoltaic device is a photovoltaic device in which light illuminates a p-n junction through the edge of the device (i.e. in the direction substantially non-parallel) to the direction defined by the devices electrical contacts to the outer surface. While these devices are advantageous, they are yet to achieve the high efficiency and low cost required for commerical viability. This invention relates to the fabrication of horizontally stacked, p-n junction type semiconductor devices for photovoltaic energy conversion via edge illumination.

In many industries, the blending of particulate material, for example, powders is often critical to the performance or desired characteristics of the resulting product, for example, the blending of powders to make concrete, the blending of pharmaceuticals, the blending of food ingredients, or the blending of ceramics, among other products.

Interest in biomolecules including proteins and oligonucleotides has exploded in recent years, but while supplies of raw materials are relatively abundant, an ongoing problem encountered is separation andor purification of these materials. Displacement chromatography can be used to perform such difficult separations in an efficient and cost effective manner.

Double Dutch jump roping is a fun activity that requires skill. The activity is mainly played for recreation and for competitions. Industry has neglected to see the vast number of benefits in this activity, such as enhanced cardiovascular system, improved coordination and agility, and it is generally a very entertaining activity. The main limitation in the sport is that much of the skill comes from being able to turn the ropes.

Semiconductor nanoparticles (also called quantum dots or nanocrystals) are generally used a lasing medium in a laser, as fluorescent tags in biological testing methods, and as electronics devices. However, these nanoparticles traditionally have high production costs and the methods used for synthesis are extremely toxic at high temperatures, posing safety risks during mass production. Additionally, it has been difficult to form nanoparticles of uniform size. This invention is directed to semiconductor nanoparticles having an elementally passivated surface.

The current high-growth nature of digital communications demands higher speed serial communication circuits. Present day technologies barely manage to keep up with the present need to communicate at high speeds (e.g., gigabit, terabit, and higher transmission speeds). New techniques are needed to ensure that methods for serial communication can continue to expand and grow. A novel approach to high-frequency communications demands on serial communications circuits has been invented.

The current high-growth nature of digital communications demands higher speed serial communication circuits. Present day technologies barely manage to keep up with the present need to communicate at high speeds, e.g. gigabit, terabit, and higher transmission speeds. Multiplexers are often used but have different input and output rates, which can cause jitter in the output signal.

Advances in the semiconductor industry continue to be desired to address demand for semiconductor devices capable of high performance and low power consumption in a wide variety of applications. In one or more applications, enhanced high-voltage semiconductor devices such as, enhanced Schottky diodes, p-i-n diodes, insulated-gate bipolar transistors (IGBT), bipolar junction transistors (BJTs), etc., may be desired for, for instance, high-speed power switching applications.